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IRF120 series datasheets. Manufacturer: GESS.
IRF120 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF121 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF122 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF123 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
There are other manufacturers for this components. For more information please check IRF120 (Fairchild Semiconductor) IRF120 (Intersil Corp.) IRF120 (Samsung Electronic)
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